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/business/descriptionNot yet authored.Navitas Semiconductor Corporation (“we,” us,” “Navitas” or the “Company”) designs, develops and markets next-generation power semiconductors including gallium nitride (GaN) power integrated circuits (ICs), high-voltage silicon carbide (SiC) devices and associated high-speed silicon system controllers, and digital isolators used in power conversion and charging. We focus on high-power markets including artificial intelligence (“AI”) data centers, energy and grid infrastructure, performance computing and industrial electrification. Our products are engineered to deliver superior efficiency, performance, power density, and sustainability compared to legacy, silicon-based technologies. By leveraging the unique properties of wide bandgap (WBG) materials such as GaN and SiC, our solutions enable higher power throughput, higher voltage operation, improved thermal performance, and reduced system size and cost, which are critical advantages for high-power applications such as hyperscale and AI data centers, grid electrification, high-performance computing clusters, and industrial automation. We operate as a product design house that contracts the manufacturing of its.
/business/drivers/0Not yet authored.Our products are engineered to deliver superior efficiency, performance, power density, and sustainability compared to legacy, silicon-based technologies.
/business/drivers/1Not yet authored.We operate as a product design house that contracts the manufacturing of its chips and packaging to partner suppliers.
/business/drivers/2Not yet authored.Our mission is to drive innovation in high-frequency, high-efficiency, and high-density power electronics, enabling our customers to achieve greater energy.
/earnings/next_report_dateNone2026-10-25
/earnings/sourceNo published note dates the next report.estimated from 10-Q filed 2026-07-27 plus 90 days
/memory/bands/10d/p10-12.127-8.116
/memory/bands/10d/p500.283-0.007
/memory/bands/10d/p9019.0697.248
/memory/bands/10d/p_up0.5070.5
/memory/bands/1d/p10-4.406-2.022
/memory/bands/1d/p50-0.013-0.026
/memory/bands/1d/p905.2192.173
/memory/bands/1d/p_up0.50.497
/memory/bands/5d/p10-9.29-4.675
/memory/bands/5d/p50-0.282-0.13
/memory/bands/5d/p9011.3445.184
/memory/bands/5d/p_up0.4770.483
/meta/as_of2026-09-172026-09-18
/meta/business_authoredNoneFalse
/meta/extract_accessionNone0001821769-26-000007
/meta/extract_filedNone2026-02-27
/meta/extract_formNone10-K
/meta/extract_sourceNonefiling
/meta/extract_urlNonehttps://www.sec.gov/Archives/edgar/data/1821769/000182176926000007/nvts-20251231.htm
/meta/revision12
/thesis/viewNot yet authored.
/thesis/what_changes_itNot yet authored.